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PD - 9.1108
IRGBC30MD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast Copack IGBT
VCES = 600V VCE(sat) 2.9V
G
@VGE = 15V, IC = 16A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO-220AB
Max.
600 26 16 52 52 12 52 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.50 -- 2 (0.07)
Max.
1.2 2.5 -- 80 --
Units
C/W
g (oz)
Revision 2
C-357
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IRGBC30MD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 ----V VGE = 0V, I C = 250A --- 0.65 --- V/C VGE = 0V, IC = 1.0mA --1.9 2.9 IC = 16A V GE = 15V --2.7 --V IC = 26A See Fig. 2, 5 --2.2 --IC = 16A, T J = 150C 3.0 --5.5 VCE = VGE, IC = 250A ---12 --- mV/C VCE = VGE, IC = 250A 3.3 6.5 --S VCE = 100V, I C = 16A ----- 250 A VGE = 0V, V CE = 600V ----- 2500 VGE = 0V, V CE = 600V, T J = 150C --1.4 1.7 V IC = 12A See Fig. 13 --1.3 1.6 IC = 12A, T J = 150C ----- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. --------------------10 ----------------------------------Typ. Max. Units Conditions 35 53 IC = 16A 7.4 11 nC VCC = 400V 14 21 See Fig. 8 68 --TJ = 25C 130 --ns IC = 16A, V CC = 480V 330 500 VGE = 15V, R G = 23 310 470 Energy losses include "tail" and 1.5 --diode reverse recovery. 2.1 --mJ See Fig. 9, 10, 11, 18 3.6 5.4 ----s VCC = 360V, T J = 125C VGE = 15V, R G = 23, VCPK < 500V 66 --TJ = 150C, See Fig. 9, 10, 11, 18 120 --ns IC = 16A, V CC = 480V 580 --VGE = 15V, R G = 23 630 --Energy losses include "tail" and 5.7 --mJ diode reverse recovery. 7.5 --nH Measured 5mm from package 750 --VGE = 0V 110 --pF VCC = 30V See Fig. 7 9.3 -- = 1.0MHz 42 60 ns TJ = 25C See Fig. 80 120 TJ = 125C 14 I F = 12A 3.5 6.0 A TJ = 25C See Fig. 5.6 10 TJ = 125C 15 V R = 200V 80 180 nC TJ = 25C See Fig. 220 600 TJ = 125C 16 di/dt = 200A/s 180 --A/s TJ = 25C See Fig. 120 --TJ = 125C 17 Pulse width 5.0s, single shot.
VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
C-358
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IRGBC30MD2
16
D u ty c y cle : 5 0 % T J = 1 2 5 C T sin k = 9 0 C G a te d rive a s sp e c if ie d T u rn -o n lo s s e s in c lu d e e ffe cts o f re v e rse re c o v e ry P o w e r D is s ip a tio n = 2 1 W
12
Load Current (A)
8
6 0 % o f ra te d vo lta g e
4
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25C TJ = 150C
10
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1
0.1 0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-359
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IRGBC30MD2
30
25
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
5.0
VGE = 15V 80s PULSE WIDTH I C = 32A
4.0
20
3.0
15
I C = 16A
2.0
10
I C = 8.0A
1.0
5
0 25 50 75 100 125
A
150
0.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0
PD M
0.1
0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E )
t
1
t
2
N o te s : 1 . D u ty fa c to r D = t
1
/t
2
0.01 0.00001
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.00 1
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-360
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IRGBC30MD2
1400
1200
VGE , Gate-to-Emitter Voltage (V)
A
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
VCE = 400V I C = 16A
16
C, Capacitance (pF)
1000
Cies
800
12
Coes
600
8
400
4
200
Cres
0 1 10
0 0 10 20 30
A
40
100
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.80 3.76
Total Switching Losses (mJ)
3.72 3.68 3.64 3.60 3.56 3.52 3.48 3.44 3.40 0
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 16A
100
RG = 23 V GE = 15V V CC = 480V I C = 32A
10
I C = 16A I C = 8.0A
1
A
10 20 30 40 50 60
0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGBC30MD2
15
12
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TC V CC V GE
= 23 = 150C = 480V = 15V
100
VGE = 20V TJ = 125C
SAFE OPERATING AREA
9
10
6
3
0 0 10 20 30
A
40
1 1 10 100
A
1000
I C , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C
10
TJ = 125C TJ = 25C
1 0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-362
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IRGBC30MD2
160 100
VR = 200V TJ = 125C TJ = 25C
120
VR = 200V TJ = 125C TJ = 25C
I F = 24A
t rr - (ns)
I F = 12A
80
I IRRM - (A)
I F = 24A
10
I F = 12A IF = 6.0A
I F = 6.0A
40
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
600
10000
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
400
di(rec)M/dt - (A/s)
1000
Q RR - (nC)
IF = 6.0A
I F = 24A I F = 12A
I F = 12A
100
200
IF = 6.0A
IF = 24A
0 100
di f /dt - (A/s)
1000
10 100
1000
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. dif/dt C-363
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRGBC30MD2
90% Vge +Vge Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr =
trr id dt tx
t4 Erec = Vd id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 1 - JEDEC Outline TO-220AB
C-364
Section D - page D-12
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